Method for fabricating semiconductor device including metal contact

A method for fabricating a semiconductor device, comprising:

• forming first landing metal contacts over a first region of a substrate and forming bit line contacts in a second region of the substrate at substantially the same time, wherein the substrate includes the first region and the second region;
• forming an inter-layer insulation layer over the substrate structure;
• forming a plurality of bit lines including first bit lines coupled to the bit line contacts in the second region and second bit lines formed over the inter-layer insulation layer in the first region;
• forming second landing metal through-hole contacts passing between adjacent second bit lines to be coupled to the first landing metal contacts;
• forming metal contacts over the second landing metal contacts;
• and
• forming a metal line over the metal contacts.

A method for fabricating a semiconductor device, comprising:

• forming a first inter-layer insulation layer over a substrate that includes a first region and a second region;
• forming first landing metal contacts in the first region, the first landing metal contacts passing through the first inter-layer insulation layer to be coupled to the substrate;
• forming a second inter-layer insulation layer over the substrate structure;
• etching portions of the second inter-layer insulation layer and the first inter-layer insulation layer in the second region to form bit line contact holes exposing portions of the substrate;
• forming a plurality of bit lines including first bit lines, also functioning as bit line contacts, buried over the bit line contact holes in the second region and second bit lines formed over the second inter-layer insulation layer in the first region;
• forming second landing metal through hole contacts passing between adjacent second bit lines to be coupled to the first landing metal contacts;
• forming metal contacts over the second landing metal contacts;
• and
• forming a metal line over the metal contacts.

A semiconductor device, comprising:

• a substrate including a first region and a second region, wherein a plurality of first bit lines patterned in a line and space form are formed in the first region and a plurality of second bit lines patterned in an irregular and island form are formed in the second region;
• gate structures formed in the first region and the second region over the substrate;
• first landing metal contacts coupled to the gate structures;
• second landing metal through-hole contacts passing between adjacent first bit lines to be coupled to the first landing metal contacts;
• bit line contacts coupling the second bit lines and the first landing metal contacts;
• metal contacts including first metal contacts formed over the second landing metal contacts and second metal contacts coupled to the second bit lines;
• and
• a metal line coupled to the metal contacts.