Through-Silicon Via With Air Gap
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorMing-Fa Chen
Life of this patent
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Abstract
A semiconductor substrate having a through-silicon via with an air gap interposed between the through-silicon via and the semiconductor substrate is provided. An opening is formed partially through the semiconductor substrate. The opening is first lined with a liner and then the opening is filled with a conductive material. A backside of the semiconductor substrate is thinned to expose the liner, which is subsequently removed to form an air gap around the conductive material of the through-silicon via. A dielectric layer is formed of the backside of the semiconductor substrate to seal the air gap.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- a through-silicon via extending through the semiconductor substrate;
- and
- an air gap interposed between the through-silicon via and the semiconductor substrate.
A method of forming a semiconductor device, the method comprising:
- providing a semiconductor substrate, the semiconductor substrate having a first side and a second side opposite the first side;
- forming an opening extending from the first side of the semiconductor substrate into the semiconductor substrate;
- forming a liner along sidewalls of the opening;
- forming a conductive material over the liner in the opening;
- thinning the second side of the semiconductor substrate, thereby exposing the liner;
- removing at least a portion of the liner interposed between the conductive material and the semiconductor substrate, thereby forming an air gap;
- and
- forming a dielectric layer along the second side of the semiconductor substrate, thereby sealing the air gap on the second side of the semiconductor substrate.
A method of forming a semiconductor device, the method comprising:
- providing a semiconductor substrate having a through-silicon via extending from a circuit side partially through the semiconductor substrate, a liner being interposed between the through-silicon via and the semiconductor substrate;
- thinning a backside of the semiconductor substrate such that the liner is exposed;
- removing at least a portion of the liner interposed between the through-silicon via and the semiconductor substrate, thereby forming an opening around the through-silicon via on the backside of the semiconductor substrate;
- and
- forming a dielectric layer over the opening, leaving a sealed air gap interposed between the through-silicon via and the semiconductor substrate.
Dependencies are inferred from the claim text.