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US 2010/0164112 A1Published application
Semiconductor device
AssigneeSumitomo Electric Device Innovations, Inc.
InventorsTakeshi Hishida, Tsutomu Igarashi
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Abstract
A semiconductor device includes a semiconductor layer, an electrode pad that is composed of Au and is provided on the semiconductor layer, a silicon nitride film provided on the semiconductor layer and the electrode pad so that an end portion of the silicon nitride film is located, and a metal layer that contacts a part of a surface of the electrode pad and the end portion of the silicon nitride film and is provided so that another part of the surface of the electrode pad is exposed, the metal layer including any of Ti, Ta and Pt.
Claims8
A semiconductor device comprising:
- a semiconductor layer;
- an electrode pad that is composed of Au and is provided on the semiconductor layer;
- a silicon nitride film provided on the semiconductor layer and the electrode pad, an end portion of the silicon nitride film being located on the electrode pad;
- and
- a metal layer that contacts a part of a surface of the electrode pad and the end portion of the silicon nitride film and is provided so that another part of the surface of the electrode pad is exposed, the metal layer including any of titanium, tantalum and platinum.
2 more elements
Dependencies are inferred from the claim text.