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US 2010/0164108 A1Published application
Integrating a bottomless via to promote adsorption of antisuppressor on exposed copper surface and enhance electroplating superfill on noble metals
OwnerSteven W. Johnston, Chin-Chang Chenginventors
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Abstract
A method for forming a copper interconnect is described. An opening in a dielectric layer disposed on a substrate is formed. A barrier layer is formed on the opening. A seed layer is formed on the barrier layer. The seed layer includes a noble metal copper alloy, the copper having less than 50% of the atomic weight of the noble metal copper alloy.
Claims4
An apparatus comprising:
- a dielectric layer having an opening;
- a barrier layer on the opening;
- and
- a seed layer on the barrier layer, the seed layer having a noble metal-copper alloy, the copper having less than 50% weight of the noble metal-copper alloy layer.
1 more element
An apparatus comprising:
- a dielectric layer having an opening, the dielectric layer disposed on a copper interconnect of a substrate;
- a barrier layer formed on the opening;
- and
- a seed layer formed on the barrier layer, the seed layer having a noble metal or a noble metal-copper alloy, the bottom of the opening exposing copper from the copper interconnect.
1 more element
Dependencies are inferred from the claim text.