SEMICONDUCTOR DEVICE HAVING MULTILAYERED INTERCONNECTION STRUCTURE FORMED BY USING Cu DAMASCENE METHOD, AND METHOD OF FABRICATING THE SAME

A semiconductor device fabrication method comprising:

• forming a Cu interconnection on a first barrier metal layer in a trench formed in an insulating film on a substrate;
• forming a film which prevents oxidation and diffusion of Cu on the insulating film, the first barrier metal layer, and the Cu interconnection;
• forming an interlayer dielectric film on the film which prevents oxidation and diffusion of Cu;
• forming a hole which exposes the Cu interconnection in positions, which correspond to the Cu interconnection, of the interlayer dielectric film and the film which prevents oxidation and diffusion of Cu;
• forming, in the hole, a second barrier metal layer to prevent a reaction between Cu and Al;
• forming a third barrier metal layer to increase a fluidity of Al with respect to the second barrier metal layer, on a surface of the second barrier metal layer in the hole;
• forming Al at a temperature of 325° C. to 450° C. such that Al is buried on the third barrier metal layer in the hole;
• and
• forming an Al-based interconnection by patterning the Al-based film, the third barrier metal layer, and the second barrier metal layer.