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AssigneeCheil Industries Inc.
InventorsTae Young LEE, In Kyung LEE, Byoung Ho CHOI, Yong Soon PARK
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Provided is a CMP slurry composition for barrier polishing for manufacturing copper interconnects, the composition including abrasive particles, a copper surface protective agent, a copper corrosion inhibitor, an oxidizing agent, and a pH adjustor, wherein the abrasive particles are non-spherical colloidal silica having a ratio of an average primary particle size to an average secondary particle size of about 0.6 or less and the copper surface protective agent is a carboxyl-functionalized water-soluble polymer.
A CMP slurry composition for barrier polishing for manufacturing copper interconnects, the composition comprising abrasive particles, a copper surface protective agent, a copper corrosion inhibitor, an oxidizing agent, and a pH adjustor,
A method of polishing a barrier film for manufacturing copper interconnects using a CMP slurry composition comprising abrasive particles, a copper surface protective agent, a copper corrosion inhibitor, an oxidizing agent, and a pH adjustor, wherein the abrasive particles are non-spherical colloidal silica having a ratio of an average primary particle size to an average secondary particle size of about 0.6 or less and the copper surface protective agent is a carboxyl-functionalized water-soluble polymer.
Dependencies are inferred from the claim text.