Semiconductor device including a cost-efficient chip-package connection based on metal pillars
OwnerFrank Kuechenmeister, Matthias Lehr +1inventors
InventorsFrank Kuechenmeister, Matthias Lehr, Alexander Platz
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Abstract
In sophisticated semiconductor devices, a chip-package interconnect structure may be established on the basis of a metal pillar without using a solder bump material in the package. In this case, the complexity of the manufacturing process for forming the wiring system of the package may be significantly reduced, while also providing the possibility of increasing packing density of the pillar structure.
Claims27
A packaged semiconductor device, comprising:
- a metallization system formed above a chip substrate, said metallization system comprising a final metallization layer comprising a chip contact pad, said metallization system further comprising a passivation layer formed above said final metallization layer and exposing a portion of said chip contact pad;
- a metal pillar having a contact surface that extends above a surface of said passivation layer, said metal pillar being in contact with said chip contact pad;
- a package wiring system comprising a final package metallization level comprising a package dielectric material and a package contact pad embedded in said package dielectric material;
- and
- a solder-free connection region formed between said metal pillar and said package contact pad.
A packaged semiconductor device, comprising:
- a metallization system formed above a chip substrate, said metallization system comprising a final metallization layer comprising a chip contact pad, said metallization system further comprising a passivation layer formed above said final metallization layer and exposing a portion of said chip contact pad;
- a metal pillar having a contact surface that extends above a surface of said passivation layer, said metal pillar being in contact with said chip contact pad;
- a package wiring system comprising a final package metallization level comprising a package dielectric material and a package contact pad embedded in said package dielectric material;
- and
- a lead-free connection region formed between said metal pillar and said package contact pad, said lead-free connection region having lateral dimensions that are substantially equal to lateral dimensions of at least one of said metal pillar and said package contact pad.
A method of connecting a package and a semiconductor chip, the method comprising:
- forming a package wiring system having a final metallization level comprising a package contact pad, said package contact pad having an exposed surface;
- providing a solder-free first connection interface on said exposed surface;
- and
- connecting a second connection interface formed on a metal pillar of a metallization system of said semiconductor chip to said solder-free first connection interface.
Dependencies are inferred from the claim text.