Semiconductor device and manufacturing method thereof

A semiconductor device comprising:

• a semiconductor substrate comprising an electronic component formed on a top surface of the semiconductor substrate;
• a supporting member having a bottom surface and a top surface and bonded to the semiconductor substrate;
• an adhesive layer attaching the bottom surface of the supporting member to the top surface of the semiconductor substrate;
• and
• an electrode disposed on the bottom surface of the supporting member and electrically connected with the electronic component;
• wherein the supporting member has a first through-hole connecting the top and bottom surfaces of the supporting member and provided therein with a first conductive terminal electrically connected with the electrode and a second through-hole not provided with the first conductive terminal and configured to house all or a portion of another device.

A stacked layer type semiconductor device comprising a plurality of semiconductor devices vertically stacked, comprising:

• a lower layer semiconductor device comprising a semiconductor substrate having an electronic component on a surface thereof and a supporting member bonded to the surface of the semiconductor substrate through an adhesive layer;
• and
• an upper layer semiconductor device disposed on the lower layer semiconductor device and comprising a semiconductor substrate having an electronic component on a surface thereof and a supporting member bonded to the surface of the semiconductor substrate of the upper layer semiconductor device through an adhesive layer,
• wherein the supporting member of the lower layer semiconductor device comprises a depressed portion or a through-hole formed from a top surface thereof, and all or a portion of the upper layer semiconductor device is housed in the depressed portion or the through-hole of the supporting member of the lower layer semiconductor device.

A method of manufacturing a semiconductor device, comprising:

• providing a semiconductor substrate comprising an electronic component formed on a surface thereof and an electrode electrically connected with the electronic component and formed on the surface of the semiconductor substrate;
• bonding a supporting member to the surface of the semiconductor substrate using an adhesive;
• and
• forming a depressed portion from a top surface of the supporting member.

A method of manufacturing a stacked layer type semiconductor device, comprising:

• providing a lower layer semiconductor device comprising a semiconductor substrate having an electronic component formed on a surface thereof and an electrode electrically connected with the electronic component and a supporting member bonded to the surface of the lower layer semiconductor substrate through an adhesive layer;
• placing on the lower layer semiconductor device an upper layer semiconductor device comprising a semiconductor substrate having an electronic component formed on a surface thereof and an electrode electrically connected with the electronic component and a supporting member bonded to the surface of the upper layer semiconductor substrate through an adhesive layer,
• wherein a depressed portion or a through-hole is formed from a top surface of the supporting member of the lower layer semiconductor device;
• and
• all or a portion of the upper layer semiconductor device is housed in the depressed portion or the through-hole in the supporting member of the lower layer semiconductor device.