Plasma cvd apparatus, method for forming thin film and semiconductor device

A thin-film forming method comprising:

• introducing a compound having a borazine skeleton into a portion above a substrate placed inside a reaction chamber;
• applying a negative charge to a feeding electrode that supports said substrate placed inside said reaction chamber;
• generating a plasma inside said reaction chamber by generating a high frequency energy using a plasma generator arranged opposite to said feeding electrode via said substrate so that said compound is brought into a reaction active state with the borazine skeleton being maintained therein;
• and
• selectively sweeping cations out of the active components of said compound in said reaction active state onto said substrate by said negative charge applied to said feeding electrode and successively bonding the borazine skeletons of said cations to a film on said substrate and polymerizing the borazine skeletons to be deposited on said substrate.

A plasma CVD apparatus supplied with a compound including a borazine skeleton and activating a film on a substrate by plasma induction to successively bond the bolazine skeleton of said compound in reaction active state to said activated film on said substrate and polymerize the borazine skeleton to deposit a polymerized film including the borazine skeleton on said substrate, thereby forming the polymerized film including the borazine skeleton on said substrate, comprising:

• a reaction chamber including an inlet used for supplying said compound to a portion above said substrate;
• a feeding electrode, arranged within said reaction chamber, for supporting said substrate with a temperature adjusted in a range from 50° C. or more to 400° C. or less and inducing plasma with a power of 3000 W or less using a first high frequency power supply and a first matching device to multiplex a negative charge;
• and
• a winding coil, arranged outside of said reaction chamber to be opposite to said feeding electrode via said substrate, for exciting said compound introduced from said inlet,
• wherein said winding coil is connected to a second high frequency power supply and a second matching device, and provides a uniform plasma field only in the portion above said substrate to be opposite to said feeding electrode using said second high frequency power supply and said second matching device so that said compound is brought into a reaction active state with the borazine skeleton being maintained therein, and
• said feeding electrode selectively sweeps cations out of the borazine skeleton of said compound in reaction active state onto said substrate using said multiplexed negative charge.