Integrated capacitor having a non-uniform thickness
AssigneeSTMicroelectronics S.r.l.
InventorAntonio Di Franco
Life of this patent
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Abstract
An embodiment of an electronic device integrated in a chip of semiconductor material and an embodiment of a corresponding production method are proposed. The electronic device includes a capacitor having a first conductive plate, a second conductive plate, and an insulating layer for insulating the first plate from the second plate. In an embodiment of the invention, at least a selected one between the first plate and the second plate has a non-uniform thickness.
Claims41
An electronic device integrated in a chip of semiconductor material, the electronic device including a capacitor having a first conductive plate, a second conductive plate, and an insulating layer for isolating the first plate from the second plate, wherein
- at least a selected one between the first plate and the second plate has a non-uniform thickness.
A method for making an electronic device integrated in a chip of semiconductor material, wherein the method includes the steps of:
- forming a first conductive plate of a capacitor of the electronic device,
- forming an insulating layer on the first plate,
- forming a second conductive plate on the insulating layer,
- wherein the step of forming at least a selected one between the first plate and the second plate includes forming the selected plate with a non-uniform thickness.
A semiconductor structure, comprising:
- a first conductive layer including a first region having a first thickness and having a second region having a second thickness that is greater than the first thickness;
- a first insulator layer disposed over the first conductive layer;
- and
- a second conductive layer disposed over the insulator layer and the first region of the first conductive layer.
An integrated circuit, comprising:
- a first conductive layer including a first region having a first thickness and having a second region having a second thickness that is greater than the first thickness;
- a first insulator layer disposed over the first conductive layer;
- and
- a second conductive layer disposed over the insulator layer and the first region of the first conductive layer.
A system, comprising:
- a first integrated circuit, comprising:
- a first conductive layer including a first region having a first thickness and having a second region having a second thickness that is greater than the first thickness;
- a first insulator layer disposed over the first conductive layer;
- and
- a second conductive layer disposed over the insulator layer and the first region of the first conductive layer;
- and
- a second integrated circuit coupled to the first integrated circuit.
A method, comprising:
- forming a first conductive layer having a first region of a first thickness and a second region of a second thickness that is greater than the first thickness;
- forming a first insulator layer over the first conductive layer;
- and
- forming a second conductive layer over the insulator layer and over the first region of the first conductive layer.
A method, comprising:
- operating a semiconductor structure as a capacitor, the structure comprising:
- a first conductive layer having a first region of a first thickness and a second region of a second thickness that is greater than the first thickness;
- a first insulator layer disposed over the first conductive layer;
- and
- a second conductive layer disposed over the insulator layer and over the first region of the first conductive layer.
Dependencies are inferred from the claim text.