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US 2010/0164064 A1Published application
Capacitor and Method for Manufacturing the Same
OwnerHyun Dong KIMinventor
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Abstract
A capacitor and methods for manufacturing the capacitor are disclosed. The method may include forming a first electrode on a substrate, forming a dielectric layer on the first electrode, the dielectric layer having a first silicon oxide (SiO2) layer, a zirconium-doped hafnium oxide (Zr-doped HfO2) layer and a second silicon oxide layer sequentially, and forming a second electrode on the dielectric layer.
Claims19
A method for manufacturing a capacitor, comprising:
- forming a first electrode on a substrate;
- forming a dielectric layer on the first electrode, the dielectric layer having a first silicon oxide (SiO2) layer, a zirconium-doped hafnium oxide (Zr-doped HfO2) layer and an second silicon oxide layer;
- and
- forming a second electrode on the dielectric layer.
1 more element
A capacitor, comprising:
- a first electrode on a substrate;
- a dielectric layer comprising a first silicon oxide (SiO2) layer, a zirconium-doped hafnium oxide (Zr-doped HfO2) layer and a second silicon oxide (SiO2) layer on the first electrode;
- and
- a second electrode on the dielectric layer.
1 more element
A method for manufacturing a capacitor, comprising:
- forming first and second electrodes on a substrate;
- forming a dielectric layer on and/or between the first and second electrodes, the dielectric layer having a first silicon oxide layer, a zirconium-doped hafnium oxide layer on the first silicon oxide layer and a second silicon oxide layer on the zirconium-doped hafnium oxide layer.
Dependencies are inferred from the claim text.