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US 2010/0164059 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeFujitsu Limited
InventorTakashi SUZUKI
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate; an insulating film formed over the semiconductor substrate, there being formed in the insulating film a trench that in a sectional view has a stepped shape; and a wiring formed in the trench, wherein the wiring includes, a main portion with a first thickness; and an extended portion with a second thickness that is thinner than the first thickness and that extends outward from a side of the main portion.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating film formed over the semiconductor substrate, there being formed in the insulating film a trench that in a sectional view has a stepped shape;
- and
- a wiring formed in the trench,
- wherein the wiring includes,
- a main portion with a first thickness;
- and
- an extended portion with a second thickness that is thinner than the first thickness and that extends outward from a side of the main portion.
5 more elements
A semiconductor device manufacturing method comprising:
- forming an insulating film over a substrate;
- forming a trench with a stepped shape in the insulating film;
- and
- forming a wiring layer in the trench,
- wherein the forming the wiring includes,
- forming a main portion with a first thickness, and
- forming an extended portion so as to have an second thickness thinner than the first thickness and so as to extend outward from a side of the main portion.
4 more elements
Dependencies are inferred from the claim text.