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US 2010/0164046 A1Published application
Image sensor and method for manufacturing the same
OwnerTae Gyu Kiminventor
Life of this patent
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Abstract
An image sensor and a method for manufacturing the same are provided. The image sensor can include a semiconductor substrate, an interlayer dielectric, a second doped layer, a first doped layer, an ohmic contact layer, and metal contacts. The semiconductor substrate can have a pixel region and a peripheral region defined therein. The second doped layer, the first doped layer, and the ohmic contact layer can be stacked on the interlayer dielectric of the semiconductor substrate to form an image sensing device in the pixel region.
Claims20
An image sensor comprising:
- a semiconductor substrate having a pixel region and a peripheral region defined therein;
- a readout interconnection on the semiconductor substrate connected to the pixel region;
- a ground interconnection on the semiconductor substrate connected to the peripheral region;
- an interlayer dielectric on the semiconductor substrate;
- a second doped layer, a first doped layer, and an ohmic contact layer stacked on the interlayer dielectric, wherein the first doped layer is on the second doped layer and the ohmic contact layer is on the first doped layer;
- an image sensing device in the pixel region, wherein the image sensing device comprises the ohmic contact layer, the first doped layer, and a portion of the second doped layer corresponding to the pixel region;
- a first metal contact extending through the image sensing device and the interlayer dielectric, wherein the first contact is in contact with the readout interconnection;
- a barrier pattern on a sidewall of the first metal contact;
- and
- a second metal contact on the first metal contact and a portion of the ohmic contact layer, wherein the second metal contact has a width greater than a width of the first metal contact, wherein the second metal contact is in contact with the first metal contact and the ohmic contact layer.
7 more elements
A method for manufacturing an image sensor, comprising:
- forming a pixel region and a peripheral region in a semiconductor substrate;
- forming a readout interconnection on the semiconductor substrate connected to the pixel region;
- forming a ground interconnection on the semiconductor substrate connected to the peripheral region;
- forming an interlayer dielectric on the semiconductor substrate;
- bonding an image sensing device to the interlayer dielectric, the image sensing device comprising a second doped layer, a first doped layer, and an ohmic contact layer stacked therein;
- forming a first via hole through the image sensing device and the interlayer dielectric exposing the readout interconnection;
- forming a barrier pattern on a sidewall of the first via hole;
- forming a metal contact in the first via hole;
- forming a trench over the via hole and having a width greater than a width of the first via hole by removing a portion of the metal contact and a portion of the barrier pattern to expose the ohmic contact layer at sides of the first via hole;
- and
- forming a contact plug in the trench.
8 more elements
A method for manufacturing an image sensor, comprising:
- forming a pixel region and a peripheral region in a semiconductor substrate;
- forming a readout interconnection on the semiconductor substrate connected to the pixel region;
- forming a ground interconnection on the semiconductor substrate connected to the peripheral region;
- forming an interlayer dielectric on the semiconductor substrate;
- forming an image sensing device comprising a second doped layer, a first doped layer, and an ohmic contact layer on the interlayer dielectric;
- forming a first via hole through the image sensing device and the interlayer dielectric exposing the readout interconnection;
- forming a barrier pattern on a sidewall of the first via hole;
- forming a trench over the via hole and having a width greater than a width of the first via hole to expose the ohmic contact layer;
- and
- gap-filling a metal layer in the first via hole and the trench to form metal contacts.
7 more elements
Dependencies are inferred from the claim text.