Image sensor and manufacturing method thereof
OwnerChang-Eun Leeinventor
Life of this patent
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Abstract
An image sensor includes first to fourth image sensing sections symmetrically aligned in a form of a 2×2 matrix, first to fourth pixel arrays aligned in the first to fourth image sensing sections, respectively, in adjacent to each other, and first to fourth peripheral circuit parts aligned at peripheral portions of the first to fourth image sensing sections. A middle-size CMOS image sensor is provided that is suitable for the available field size of conventional photo equipment, so the manufacturing cost may be minimized and price competitiveness may be maximized while providing high-quality images with high pixel resolution.
Claims20
A device comprising:
- first to fourth image sensing sections symmetrically aligned in a form of a 2×2 matrix;
- first to fourth pixel arrays aligned in the first to fourth image sensing sections, respectively, substantially adjacent to each other;
- and
- first to fourth peripheral circuit parts aligned at peripheral portions of the first to fourth image sensing sections.
A device comprising:
- first and second image sensing sections;
- first and second pixel arrays aligned adjacent to each other at a boundary between the first and second image sensing sections;
- and
- first and second peripheral circuit parts aligned at peripheral portions of the first and second image sensing sections.
A method comprising:
- forming first to fourth masks, in which the second to fourth masks are formed by sequentially turning over the first mask;
- aligning the first to fourth masks on a wafer;
- and
- exposing first to fourth dies, which are substantially adjacent to each other on the wafer, through the first to fourth masks.
A method comprising:
- preparing a mask including a first mask pattern formed over a top surface of a substrate and a second mask pattern formed over a bottom surface of the substrate;
- performing a first photo process on a first image sensing section by using the first mask pattern of the mask;
- performing a second photo process on a third image sensing section by transversely rotating the mask at an angle of about 180°;
- performing a third photo process on a second image sensing section by using the second mask pattern of the mask;
- and
- performing a fourth photo process on a fourth image sensing section by transversely rotating the mask at an angle of about 180°.
A method comprising:
- forming first and second masks, in which the second mask is formed by turning over the first mask;
- aligning the first and second masks on a wafer;
- and
- exposing first and second dies, which are adjacent to each other on the wafer, through the first and second masks.
A method comprising:
- preparing a mask including a first mask pattern formed over a top surface of a substrate and a second mask pattern formed over a bottom surface of the substrate;
- performing a first photo process on a first image sensing section by using the first mask pattern of the mask;
- and
- performing a second photo process on a second image sensing section by using the second mask pattern of the mask.
Dependencies are inferred from the claim text.