Backside-illuminated (bsi) image sensor with backside diffusion doping
AssigneeOmniVision Technologies, Inc.
InventorSohei Manabe
Life of this patent
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Abstract
Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed.
Claims34
A process comprising:
- forming a pixel on a front side of a substrate;
- thinning the substrate;
- depositing a doped silicon layer on a backside of the thinned substrate;
- and
- diffusing a dopant from the doped silicon layer into the substrate.
An apparatus comprising:
- a pixel formed on a front side of a thinned substrate;
- a doped silicon layer formed on a backside of the thinned substrate;
- and
- a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate.
A system comprising:
- a backside-illuminated image sensor formed in a substrate, wherein the backside-illuminated image sensor has a pixel array including:
- a pixel formed on a front side of a thinned substrate,
- a doped silicon layer formed on a backside of the thinned substrate, and
- a region in the thinned substrate, and near the backside, where
- a dopant has diffused from the doped silicon layer into the thinned substrate;
- and
- processing circuitry coupled to the pixel array to process a signal received from the pixel array.
Dependencies are inferred from the claim text.