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US 2010/0164041 A1Published application
Back side illuminaton image sensor and method for manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorMUN HWAN KIM
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Abstract
A back side illumination image sensor according to an embodiment includes: a photosensitive device and a readout circuit on the front side of a first substrate; an interlayer dielectric layer on the front side of the first substrate; a metal line on the interlayer dielectric layer; a pad having a step on the interlayer dielectric layer; and a second substrate bonded with the front side of the first substrate over the interlayer dielectric layer, metal line, and pad.
Claims13
A back side illumination image sensor, comprising:
- a photosensitive device and a readout circuit on a front side of a first substrate;
- an interlayer dielectric layer on the front side of the first substrate over the photosensitive device and the readout circuit;
- a metal line on the interlayer dielectric layer;
- a pad having a step on the interlayer dielectric layer;
- and
- a second substrate bonded with the front side of the first substrate over the metal line and the pad.
3 more elements
A method of manufacturing a back side illumination image sensor, comprising:
- forming an ion implantation layer in a front side of a first substrate;
- forming a photosensitive device and a readout circuit on the front side of the first substrate above where the ion implantation layer is formed;
- forming an interlayer dielectric layer on the front side of the first substrate over the photosensitive device and the readout circuit;
- forming a metal line and a pad metal line on the interlayer dielectric layer;
- bonding a second substrate with the front side of the first substrate over the metal line and pad metal line;
- and
- removing a lower part of the first substrate under the ion implantation layer.
4 more elements
Dependencies are inferred from the claim text.