Back side illumination image sensor and method for manufacturing the same

A method for manufacturing a back side illumination image sensor, the method comprising:

• forming an ion implantation layer by implanting ions over a whole area of a front side of a first substrate;
• defining a pixel area by forming an isolation region on the front side of the first substrate;
• forming a photo detector and a readout circuitry on the pixel area;
• forming an interlayer dielectric layer and a metal line on the front side of the first substrate;
• bonding a second substrate to the front side of the first substrate formed with the metal line;
• removing a lower portion of the first substrate defined by the ion implantation layer;
• forming a pixel division ion implantation layer on the isolation region at a back side of the first substrate after removing the lower portion of the first substrate;
• and
• forming a micro-lens on the photo detector at the back side of the first substrate.