Back side illuminaton image sensor and method for manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorMUN HWAN KIM
Life of this patent
Estimating the term…
Abstract
A back side illumination image sensor according to an embodiment includes: a device isolation region and a pixel region that are on a front side of a first substrate; a light sensor and a readout circuit that are on the pixel region; an interlayer dielectric layer and a metal line that are on the front side of the first substrate; a second substrate that is bonded to the front side of the first substrate on which the metal line is formed; a pixel isolating dielectric layer that is on the device isolation region at a back side of the first substrate; and a microlens that is on the light sensor at the back side of the first substrate
Claims20
A back side illumination image sensor, comprising:
- a device isolation region and a pixel region on a front side of a first substrate;
- a light sensor and a readout circuit on the pixel region;
- an interlayer dielectric layer and a metal line on the front side of the first substrate;
- a second substrate that is bonded to the front side of the first substrate formed with the metal line;
- a pixel isolating dielectric layer on the device isolation region at a back side of the first substrate;
- and
- a microlens on the light sensor at the back side of the first substrate.
A method of manufacturing a back side illumination image sensor, comprising:
- forming an ion implantation layer by implanting ions over an entire front side of a first substrate;
- defining a pixel region by forming a device isolation region on the front side of the first substrate;
- forming a light sensor and a readout circuit on the pixel region;
- forming an interlayer dielectric layer and a metal line on the front side of the first substrate;
- bonding a second substrate with the front side of the first substrate formed with the metal line;
- removing a lower part of the first substrate based on the ion implantation layer;
- forming a pixel isolating dielectric layer on the device isolating region at a back side of the first substrate;
- and
- forming a microlens on the light sensor at the back side of the first substrate.
Dependencies are inferred from the claim text.