Image sensor and manufacturing method thereof

Abstract

An image sensor and a manufacturing method thereof are provided. The image sensor according to an embodiment includes: a semiconductor substrate where a light receiving device is formed for each pixel; a dielectric layer formed on the semiconductor substrate; and a metal layer formed in the dielectric layer and including metal wires and light shielding patterns formed on an interface between pixels. In the image sensor according to the embodiment, since the light shielding pattern is formed by using a dummy pattern of the metal wire, the light shielding pattern may be formed close to the semiconductor substrate to minimize generation of optical leakage current, thereby improving reliability of the device.

Dependencies are inferred from the claim text.