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US 2010/0164022 A1Published application
Pmos transistor and method of manufacturing the same
OwnerJong-Won Suninventor
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Abstract
A technique for manufacturing a PMOS transistor may be capable of lowering the electrostatic capacitance of a transistor so as to improve the operation characteristics of a PMOS device. A donor wafer may be bonded onto a wafer having a tunnel oxide film formed thereon, and patterning is performed so as to form PMOS transistors having very low resistance. It is difficult to control resistance only by control with salicide, so by using a method of manufacturing a PMOS transistor using an ion-implanted donor wafer, a PMOS transistor having very low resistance and being voltage-controllable can be formed.
Claims20
An apparatus comprising:
- a logic wafer to which a donor wafer implanted with boron ions is bonded, and over which a shallow trench isolation is formed;
- and
- gate electrodes formed by performing a heat treatment on the bonded donor wafer, and after the heat treatment, by patterning the bonded donor wafer and performing reactive ion etching.
A method comprising:
- implanting the boron ions into a donor wafer;
- bonding the donor wafer implanted with boron ions onto a logic wafer having a shallow trench isolation formed therein;
- performing a heat treatment on the bonded donor wafer;
- and
- after the heat treatment, forming gate electrodes by patterning the bonded donor wafer and performing reactive ion etching.
2 more elements
Dependencies are inferred from the claim text.