Method of manufacturing semiconductor device
OwnerYong-Soo Choinventor
Life of this patent
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Abstract
A method of manufacturing a semiconductor device may include implanting fluorine ions into a portion of a poly gate region on a semiconductor substrate; forming a gate oxide film over the semiconductor substrate such that the gate oxide film is thicker in the fluorine-implanted region; forming the poly gate over the gate oxide film in the poly gate region; and forming lightly doped drains in active regions of the semiconductor substrate on both sides of the poly gate. Further, the method of manufacturing the semiconductor device includes forming spacers over both sidewalls of the poly gate; and forming source and drain regions in the active regions.
Claims20
A method comprising:
- implanting fluorine ions into a portion of a poly gate region on a semiconductor substrate;
- forming a gate oxide film over the semiconductor substrate such that the gate oxide film is thicker in the fluorine-implanted region;
- forming the poly gate over the gate oxide film in the poly gate region;
- forming lightly doped drains in active regions of the semiconductor substrate on both sides of the poly gate;
- forming spacers over both sidewalls of the poly gate;
- and
- forming source and drain regions in the active regions.
An apparatus comprising:
- a semiconductor substrate including a fluorine-implanted region overlapping a poly gate region;
- an oxide film formed over a fluorine-implanted semiconductor substrate such that a gate oxide film has a relatively large thickness over the fluorine-implanted region;
- a poly gate formed in the poly gate region over the gate oxide film;
- lightly doped drains formed in active regions of the semiconductor substrate on the sides of the poly gate;
- spacers formed over both sidewalls of the poly gate;
- source and drain regions formed in the active regions.
An apparatus configured to:
- implant fluorine ions into a portion of a poly gate region on a semiconductor substrate;
- form a gate oxide film over the semiconductor substrate such that the gate oxide film is thicker in the fluorine-implanted region;
- form the poly gate over the gate oxide film in the poly gate region;
- form lightly doped drains in active regions of the semiconductor substrate on both sides of the poly gate;
- form spacers over both sidewalls of the poly gate;
- and
- form source and drain regions in the active regions.
Dependencies are inferred from the claim text.