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US 2010/0164019 A1Published application
Method of manufacturing nonvolatile memory device
OwnerHeedon Jeonginventor
Life of this patent
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Abstract
A method of manufacturing a nonvolatile memory (NVM) device having a memory gate and a selection gate. A method of manufacturing a NVM device may include a spacer poly formed on and/or over a surface of a substrate including a memory gate. A method of manufacturing a NVM device may include a sacrificing film formed on and/or over a surface of a spacer poly. A method of manufacturing a NVM device may include an etch-back process performed to form a selection gate. The thickness of a memory gate may be minimized. A bridge between a selection gate and a source/drain may be minimized.
Claims20
A method comprising:
- forming a spacer poly over a surface of a substrate comprising a memory gate;
- forming a sacrificing material over a surface of said spacer poly;
- removing said sacrificing material by etching to expose a surface of said spacer poly and to form a sacrificing film to etch-back around a sidewall of said memory gate;
- removing said spacer poly by etching such that a surface of the substrate is exposed and such that a portion of said spacer poly remain over a source forming region at a sidewall of said memory gate below said sacrificing film;
- removing said sacrificing film to form a selection gate at a side surface of said memory gate;
- forming a source/drain region over a predetermined region of the substrate;
- and
- forming metal wires connected with said source/drain region through contact plugs.
5 more elements
An apparatus comprising:
- a memory gate;
- a selection gate at a sidewall of said memory gate and spaced apart from said memory gate by a buffer oxide film;
- a lightly doped drain spacer at said sidewall of said memory gate and said selection gate;
- a source/drain region;
- salicide over at least one of said memory gate, said selection gate and said source/drain region;
- an interlayer insulating film over a surface of the substrate;
- and
- contact plugs and metal wires connected to said source/drain region.
5 more elements
Dependencies are inferred from the claim text.