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US 2010/0164018 A1Published application
High-voltage metal-oxide-semiconductor device
OwnerMing-Cheng Lee, Tao Cheng +1inventors
InventorsMing-Cheng Lee, Tao Cheng, Ming-Tzong Yang
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Abstract
A high-voltage MOS transistor includes a gate overlying an active area of a semiconductor substrate; a drain doping region pulled back away from an edge of the gate by a distance L; a first lightly doped region between the gate and the drain doping region; a source doping region in a first ion well; and a second lightly doped region between the gate and the source doping region.
Claims19
A high-voltage MOS transistor, comprising:
- a gate overlying an active area of a semiconductor substrate;
- a drain doping region of a first conductivity type pulled back away from an edge of the gate by a distance L;
- a first lightly doped region of the first conductivity type between the gate and the drain doping region;
- a source doping region of the first conductivity type in a first ion well of a second conductivity type;
- and
- a second lightly doped region of the first conductivity type between the gate and the source doping region.
3 more elements
A high-voltage MOS transistor, comprising:
- a gate overlying an active area of a semiconductor substrate;
- a drain structure of a first conductivity type at one side of the gate, wherein the drain structure comprises a first heavily doping region spaced apart from a second heavily doping region that is proximate to the gate, a first lightly doped region interposed between the first and second heavily doping regions, and a second lightly doped region between the gate and the second heavily doping region;
- a source doping region of the first conductivity type in a first ion well of a second conductivity type at the other side of the gate;
- and
- a third lightly doped region of the first conductivity type between the gate and the source doping region.
2 more elements
Dependencies are inferred from the claim text.