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US 2010/0164017 A1Published application
Semiconductor device and method for fabricating the same
AssigneePanasonic Corporation
InventorTaiji NODA
Life of this patent
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Abstract
The semiconductor device of the present invention includes: a gate insulating film formed on a semiconductor region of a first conductivity type; a gate electrode formed on the gate insulating film; and a channel doped layer of the first conductivity type formed in the semiconductor region beneath the gate electrode. The channel doped layer contains carbon as an impurity.
Claims10
1-29. (canceled)
A semiconductor device comprising:
- a gate insulating film formed on a semiconductor region of a first conductivity type;
- a gate electrode formed on the gate insulating film;
- extended doped layers of a second conductivity type formed in the semiconductor region under sides of the gate electrode;
- and
- pocket doped layers of the first conductivity type formed in the semiconductor region under and in contact with the extended doped layers,
- wherein the extended doped layers and the pocket doped layers are provided in an inside of a carbon-containing region.
3 more elements
Dependencies are inferred from the claim text.