Selective wet etch process for cmos ics having embedded strain inducing regions and integrated circuits therefrom

A method for fabricating a CMOS integrated circuit (IC) comprising devices having embedded epitaxial strain inducing regions, comprising:

• providing a substrate having a Si comprising surface comprising PMOS regions for PMOS devices and NMOS regions for NMOS devices;
• forming a gate stack comprising a gate electrode layer on a gate dielectric layer in or on both said PMOS regions and said NMOS regions;
• simultaneously blanket implanting a dose of at least 1×1013 cm−2 of at least one n-type wet etch sensitizing specie selected from P and As to create n-type wet etch sensitized regions in both said PMOS regions and said NMOS regions on opposing sides of said gate stack;
• wet etching comprises an aqueous solution comprising at least one non-alkali metal hydroxide to remove said n-type wet etch sensitized regions in at least a portion of said PMOS regions to form a plurality of PMOS source/drain recesses;
• forming a compressive strain inducing epitaxial layer comprising SiGe in said plurality of PMOS source/drain recesses, and
• completing fabrication of said IC.

An integrated circuit (IC), comprising:

• a substrate having a semiconductor surface comprising PMOS regions for PMOS devices and NMOS regions for NMOS devices;
• a gate stack comprising a gate electrode layer on a gate dielectric layer on both said PMOS regions and said NMOS regions;
• source and drain regions on opposite sides of said gate stack for said PMOS devices and said NMOS devices,
• wherein said source and drain regions for at least a portion of said PMOS devices comprise an embedded compressive strain inducing epitaxial layer which forms a curved interface with said semiconductor surface, said semiconductor surface along an entire length of said curved interface exclusive of cleaved randomly angled edges having a n-type doping concentration that is at least 1×1017 cm−3 and varies no more than ±10% from an average doping concentration along at least a majority of said entire length, further wherein said n-type doping concentration decreases at least one order of magnitude within a distance of 0.5 μm beneath said curved interface.