Back to results
US 2010/0164001 A1Published application
Implant process for blocked salicide poly resistor and structures formed thereby
OwnerJoodong Park, Chia-Hong Jan +1inventors
InventorsJoodong Park, Chia-Hong Jan, Lisa M. McGill
Life of this patent
Estimating the term…
Abstract
Methods and associated structures of forming a microelectronic device are described. Those methods may include implanting an exposed p type silicon portion of a substrate with a carbon species, wherein endcap regions of a blocked salicide resistor and a p type structure that are both disposed on the exposed p type silicon portion of the substrate are implanted with the carbon species.
Claims20
A method comprising:
- implanting an exposed p type silicon portion of a substrate with a carbon species, wherein endcap regions of a blocked salicide resistor and a p type structure that are both disposed on the exposed p type silicon portion of the substrate are implanted with the carbon species.
A method comprising:
- masking an n-type silicon region disposed on a substrate, wherein a p type silicon region of the substrate is exposed;
- implanting the p type silicon region with a source/drain implant, wherein an endcap region of a blocked salicide resistor disposed on the p type silicon region is implanted with the source/drain implant;
- and
- implanting the p type silicon region with a carbon species, wherein the endcap region is implanted with the carbon species.
1 more element
A structure comprising:
- a blocked salicide resistor disposed on a substrate, wherein endcap regions of the blocked salicide resistor comprise a carbon species.
Dependencies are inferred from the claim text.