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AssigneeNXP B.V.
InventorPiebe A. Zijlstra
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A method of forming a substrate contact in a semiconductor device, comprising the steps of providing a semiconductor base substrate (2) having a buried oxide (BOX) layer (4) and a thin active semiconductor layer (103) on the BOX layer (4), forming a trench (104) in the active semiconductor layer (103) and the Box layer (4) to the semiconductor base substrate (2) below, and then depositing another active semiconductor (epitoxial) layer (6) over the remaining active semiconductor layer (103) and in the trench (104) to create the substrate contact. The trench (104) is etched at a location on the wafer corresponding to a scribe lane (106).
A method of fabricating a semiconductor-on-insulator device, the method comprising providing a semiconductor wafer comprising a semiconductor base substrate having a layer of insulating material thereon and a first active semiconductor layer on said layer of insulating material, wherein at least one scribe lane is provided on said wafer, the method further comprising forming a substrate contact by creating an opening in said first active semiconductor layer and said layer of insulating material to said base substrate at a location on said wafer corresponding to said at least one scribe lane and subsequently depositing a second active semiconductor layer over said first active semiconductor layer and said insulating layer and in said opening.
An integrated circuit formed on a semiconductor wafer comprising a semiconductor base substrate having a layer of insulating material thereon and a first active semiconductor layer on said layer of insulating material, said semiconductor wafer having at least two die pads formed thereon, said at least two die pads being separated by at least one scribe lane, wherein a substrate contact is formed in said layer of insulating material at a location on said wafer corresponding to said at least one scribe lane by creating an opening in said first active semiconductor layer and said layer of insulating material to said base substrate and subsequently depositing a second active semiconductor layer over said first active semiconductor layer and in said opening, wherein one or more semiconductor devices are formed in said active layer after formation of said substrate contact.
Dependencies are inferred from the claim text.