Semiconductor device and method for fabricating the same
AssigneeDongbu HiTek Co., Ltd.
InventorMi-Young Kim
Life of this patent
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Abstract
A semiconductor device includes a high voltage first conduction type well in a semiconductor substrate, a second conduction type body in the high voltage first conduction type well, a source region in the second conduction type body, a trench in the high voltage first conduction type well, a first isolation oxide, an impurity doped polysilicon film, and a second isolation oxide stacked in the trench in succession, a drain region in the high voltage first conduction type well on one side of the trench, and a polygate on and/or over the high voltage first conduction type well.
Claims20
An apparatus comprising:
- a high voltage first conduction type well formed in a semiconductor substrate;
- a second conduction type body formed in the high voltage first conduction type well;
- a source region formed in the second conduction type body;
- a trench formed in the high voltage first conduction type well;
- a first isolation oxide, an impurity doped polysilicon film, and a second isolation oxide sequentially stacked in the trench;
- a drain region formed in the high voltage first conduction type well at one side of the trench;
- and
- a polygate formed over the high voltage first conduction type well.
A method comprising:
- forming a second conduction type body by injecting impurities into a high voltage first conduction type well in a semiconductor substrate;
- forming a trench in the high voltage first conduction type well having the second conduction type body formed therein;
- sequentially forming a first isolation oxide, an impurity doped polysilicon film, and a second isolation oxide in the trench;
- sequentially forming a gate oxide film and a polygate over the high voltage first conduction type well including the second isolation oxide;
- forming a source region in the second conduction type body;
- and then forming a drain region in the high voltage first conduction type well at one side of the trench.
An apparatus comprising:
- a well region having a first conductive type;
- a body region having a second conductive type formed in the well region;
- a first impurity region having a first conductive type formed in the body region;
- a second impurity region having the second conductive type formed in the body region and in contact with the first impurity region;
- a trench formed in the well region;
- an insulating film formed over the entire bottom surface and a portion of the sidewalls of the trench;
- a first device isolation film formed in the trench and contacting the insulating film;
- a doped polysilicon film formed in the trench and contacting the insulating film and the first device isolation film;
- a second device isolation film formed in the trench and contacting the doped polysilicon film;
- a gate oxide film formed over and contacting the well region, the body region, the first, second and third impurity regions and the second device isolation film;
- a polygate formed over the gate oxide film;
- and
- a third impurity region having a first conductive type formed in the well region and spaced from the first and second impurity regions.
Dependencies are inferred from the claim text.