Laterally double-diffused metal oxide semiconductor, and method for fabricating the same

A method comprising:

• forming an well in a semiconductor substrate;
• forming a body region in the well by ion-implanting impurities in the well;
• forming a drift region having a trench structure in the well by ion-implanting impurities;
• forming device isolation layers to define an active region in the semiconductor substrate;
• forming a source region in the body region by ion-implanting high concentration impurities into the body region;
• forming a source contact region in the body region and in structural communication with the source region by ion-implanting high concentration impurities into the body region;
• forming a drain region in the well between the drift region and one of the device isolation layers by ion-implanting impurities into the well;
• and then
• forming a gate over the semiconductor substrate such that a portion of the gate overlaps the source region and another portion of the gate overlaps the drift region.

A method comprising:

• forming a well in a semiconductor substrate;
• forming a body region in the well;
• forming a drift region in the well;
• simultaneously forming a plurality of first trenches in a device isolation region of the semiconductor substrate and a second trench in the drift region;
• forming device isolation layers by filling the first trenches with a field oxide film;
• forming a source region in the body region;
• forming a source contact region in the body region and in structural communication with the source region;
• forming a drain region in the well between the drift region and one of the device isolation layers;
• forming push-pull region in the well region below the drift region;
• and then forming a gate over the semiconductor substrate such that a first portion of the gate overlaps the source region and a second portion of the gate overlaps the drift region.