Lateral Double Diffused Metal Oxide Semiconductor Device
OwnerChoul Joo KOinventor
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Abstract
Disclosed is a lateral double diffused metal oxide semiconductor (LDMOS) device and methods of making the same. The LDMOS device may include a semiconductor substrate comprising a buried region and a first well region, a gate on the semiconductor substrate, a body region in the first well region and a source region in the body region on one side of the gate, a drift region and a drain region in the drift region on an opposite side of the gate relative to the body region, a second well region, a first deep sink region and a third well region in the first well region, and a second deep sink region in the first well region.
Claims17
A lateral double diffused metal oxide semiconductor (LDMOS) device, comprising:
- a semiconductor substrate comprising a buried region and a first well region;
- a gate on the semiconductor substrate;
- a body region in the first well region and a source region in the body region on one side of the gate;
- a drift region and a drain region in the drift region on an opposite side of the gate relative to the body region;
- a second well region, a deep first sink region and a third well region in the first well region;
- and
- a deep second sink region in the first well region.
A method of making a lateral double diffused metal oxide semiconductor (LDMOS) device, comprising:
- forming a buried region and a first well region in a semiconductor substrate;
- forming first and second deep sink regions in the first well region, where the first deep sink region is in electrical contact with the buried region;
- forming a device isolation layer on and/or in the semiconductor substrate;
- forming a gate on the semiconductor substrate and at least part of the device isolation layer;
- forming a low voltage well in the first well region on one side of the gate;
- forming a body region, a second well region and a third well region in the first well region, where the body region is on an opposite side of the gate relative to the low voltage well;
- forming a source region in the body region and first and second contact regions in the second and third well regions;
- and
- forming a drain region in the low voltage well region and a third contact region in the first deep sink region.
Dependencies are inferred from the claim text.