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AssigneeRensselaer Polytechnic Institute
InventorsTat-sing Paul Chow, Kamal Raj Varadarajan
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In one aspect, a lateral MOS device is provided. The lateral MOS device includes a gate electrode disposed at least partially in a gate trench to apply a voltage to a channel region, and a drain electrode spaced from the gate electrode, and in electrical communication with a drift region having a boundary with a lower end of the channel region. The device includes a gate dielectric layer in contact with the gate electrode, and disposed between the gate electrode and the drain electrode. The channel region is adjacent to a substantially vertical wall of the gate trench. The device includes a field plate contacting the gate electrode and configured to increase a breakdown voltage of the device.
An apparatus comprising:
A method of manufacturing a lateral trench-based device, comprising:
Dependencies are inferred from the claim text.