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US 2010/0163985 A1Published application
Semiconductor and method for manufacturing the same
OwnerSung-Wook Kiminventor
Life of this patent
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Abstract
A semiconductor includes a high voltage region formed in a substrate, first and second drift regions formed in the high voltage region, an isolation layer in the high voltage region, a gate formed on and/or over the first and second drift regions, and a drain and a source formed in the first drift region and the second drift region.
Claims20
An apparatus comprising:
- a high voltage region formed in a substrate;
- first and second drift regions formed in the high voltage region;
- an isolation layer formed in the high voltage region;
- a gate formed over the first and second drift regions;
- and
- a drain and a source formed in the first drift region and the second drift region, respectively.
3 more elements
An apparatus comprising:
- a high voltage region formed in a substrate;
- a first drift region formed in the high voltage region;
- a second drift region formed in the high voltage region spaced apart from the first drift region;
- a plurality of isolation layers formed over the substrate in the high voltage region;
- a gate oxide layer formed between an adjacent pair of isolation layers;
- a gate formed over the substrate and overlapping the first drift region and the second drift region, a portion of the gate being formed directly on the gate oxide layer and another portion of the gate being formed directly on one of the isolation layers;
- a drain formed in the first drift region;
- and
- a source formed in the first drift region and the second drift region.
6 more elements
A method comprising:
- forming a high voltage region in a substrate;
- forming first and second drift regions in the high voltage region;
- forming an isolation layer in the high voltage region;
- forming a gate over the first and second drift regions;
- and then
- forming a drain and a source in the first drift region and the second drift region, respectively.
3 more elements
Dependencies are inferred from the claim text.