Back to results
US 2010/0163981 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorsJong-Min Kim, Jae-Hyun Yoo, Chan-Ho Park
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: an active region defined by a device isolation layer on and/or over a substrate; a second conductive well on and/or over the active region; an extended drain formed at one side of the second conductive well; a gate electrode on and/or over the second conductive well and the extended drain; and a source and a drain formed at both sides of the gate electrode, in which extended regions are formed at the corners of the second conductive well under the gate electrode.
Claims20
A device comprising:
- an active region defined by a device isolation layer over a substrate;
- a second conductive well over the active region;
- an extended drain formed at one side of the second conductive well;
- a gate electrode over the second conductive well and the extended drain;
- and
- a source and a drain formed at both sides of the gate electrode,
- wherein extended regions are formed at corners of the second conductive well under the gate electrode.
4 more elements
A method, comprising:
- defining an active region over a substrate, using a device isolation layer;
- forming a second conductive well in the active region;
- forming an extended drain at one side of the second conductive well;
- forming a gate electrode over the second conductive well and the extended drain;
- and
- forming a source and a drain at both sides of the gate electrode,
- wherein extended regions are formed at corners of the second conductive well under the gate electrode.
4 more elements
A method, comprising:
- defining an active region on a substrate, using a device isolation layer;
- forming a second conductive well in the active region;
- forming an extended drain at one side of the second conductive well;
- forming a gate electrode on the second conductive well and the extended drain;
- and
- forming a source and a drain at both sides of the gate electrode,
- wherein extended regions are formed at corners of the second conductive well under the gate electrode.
4 more elements
Dependencies are inferred from the claim text.