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US 2010/0163980 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorHyun-Tae Kim
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Abstract
A semiconductor device includes an isolation layer formed on and/or over a semiconductor substrate to define an isolation layer, a drift area formed in an active area separated by the isolation layer, a pad nitride layer pattern formed in a form of a plate on the drift area, and a gate electrode having step difference between lateral sides thereof due to the pad nitride layer pattern.
Claims20
A semiconductor device comprising:
- an isolation layer formed over a semiconductor substrate;
- a drift area formed in an active area separated by the isolation layer;
- a pad nitride layer pattern formed in a form of a plate on the drift area;
- and
- a gate electrode having step difference between lateral sides thereof due to the pad nitride layer pattern.
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A method comprising:
- forming a trench for device isolation by etching a semiconductor substrate along a pad oxide layer and a pad nitride layer patterned on the semiconductor substrate;
- filling the trench with an insulating material;
- forming a moat pattern over both of the insulating material and a plate area;
- forming a pad nitride layer pattern having a plate form by removing the pad nitride layer from an area other than the moat pattern and the plate area;
- and
- forming a gate electrode having a step difference at both lateral sides thereof along the pad nitride layer pattern.
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Dependencies are inferred from the claim text.