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US 2010/0163977 A1Published application
Semiconductor Device and Method for Fabricating the Same
AssigneeHynix Semiconductor Inc.
InventorSang-Hyun Lee
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Abstract
A method for fabricating a semiconductor device includes forming a trench in a substrate, forming a gate electrode buried over the trench to form a buried gate pattern, etching portions of the substrate on both sides of the buried gate pattern to a certain depth, performing an ion implantation process on the substrate to form source/drain junctions, and forming metal patterns over the source/drain junctions.
Claims14
A method for fabricating a semiconductor device, comprising:
- forming a trench in a substrate;
- forming a gate electrode buried over the trench to form a buried gate pattern;
- etching portions of the substrate on both sides of the buried gate pattern to a certain depth;
- performing an ion implantation process on the substrate to form source/drain junctions;
- and
- forming metal patterns over the source/drain junctions.
3 more elements
A semiconductor device, comprising:
- a substrate including a trench;
- spacers formed over sidewalls of the trench;
- a buried gate pattern buried over the trench;
- source/drain junctions formed in the substrate on both sides of the buried gate pattern;
- and
- metal patterns formed over the source/drain junctions.
3 more elements
A method for fabricating a semiconductor device, comprising:
- forming a buried oxide layer in a substrate;
- forming a trench over the buried oxide layer in a substrate;
- forming a gate electrode buried over the trench to form a buried gate pattern;
- etching portions of the substrate on both sides of the buried gate pattern to a certain depth;
- and
- forming metal patterns over source/drain junctions formed in the substrate.
3 more elements
Dependencies are inferred from the claim text.