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US 2010/0163968 A1Published application
Semiconductor memory device having insulation patterns and cell gate patterns
AssigneeSamsung Electronics Co., Ltd.
InventorsJingyun Kim, Myoungbum Lee, Kihyun Hwang
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Abstract
Semiconductor memory devices and methods of forming semiconductor memory devices are provided. The methods may include forming insulation layers and cell gate layers that are alternately stacked on a substrate, forming an opening by successively patterning through the cell gate layers and the insulation layers, and forming selectively conductive barriers on sidewalls of the cell gate layers in the opening.
Claims8
1-11. (canceled)
A semiconductor memory device comprising:
- insulation patterns and cell gate patterns that are alternately stacked on a substrate;
- an active pattern disposed on the substrate and extending upward along sidewalls of the insulation patterns and sidewalls of the cell gate patterns;
- a charge storage layer interposed between the sidewall of the cell gate pattern and the active pattern;
- a blocking insulation layer interposed between the sidewall of the cell gate pattern and the charge storage layer;
- a tunnel insulation layer interposed between the charge storage layer and the active pattern;
- and
- a conductive barrier interposed between the blocking insulation layer and the sidewall of the cell gate pattern and containing nitrogen.
4 more elements
Dependencies are inferred from the claim text.