Flash Memory Device and Method of Fabricating the Same

A method for fabricating a flash memory device comprising:

• forming an ONO layer and a first polysilicon layer on a substrate;
• patterning the first polysilicon layer and the ONO layer to form a plurality of floating gates;
• forming a gate oxide layer on or over the substrate and the plurality of floating gates;
• forming a resin on the substrate having the gate oxide layer thereon;
• removing a portion of the resin to expose the gate oxide layer, keeping a region between adjacent floating gates filled with the resin;
• removing the resin exposed by a photoresist pattern over resin between nearest adjacent floating gates;
• forming a second polysilicon layer on or over the floating gates and the resin;
• forming sidewall spacers on outer surfaces of the gate oxide by etching the second polysilicon layer;
• and
• removing the remaining resin between the nearest adjacent floating gates.