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US 2010/0163952 A1Published application
Flash Cell with Integrated High-K Dielectric and Metal-Based Control Gate
OwnerChia-Hong Jan, Walid M. Hafezinventors
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Abstract
A semiconductor device is described having an integrated high-k dielectric layer and metal control gate. A method of fabricating the same is described. Embodiments of the semiconductor device include a high-k dielectric layer disposed on a floating gate. The high-k dielectric layer defines a recess. A metal control gate is formed in the recess.
Claims17
A semiconductor device, comprising:
- a first dielectric layer disposed on a semiconductive body;
- a floating gate disposed on the first dielectric layer;
- a high dielectric constant (high-k) dielectric layer disposed on the floating gate, the high-k dielectric layer defining a recess;
- and
- a metal gate disposed in the recess.
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A method to form a semiconductor device, comprising:
- forming a first dielectric layer on a semiconductive body;
- forming a floating gate on the first dielectric layer;
- forming a high dielectric constant (high-k) dielectric layer on the floating gate, the high-k dielectric layer defining a recess;
- and
- forming a metal gate in the recess.
2 more elements
Dependencies are inferred from the claim text.