US 2010/0163950 A1 · Power Device with Monolithically Integrated RC Snubber

Abstract

A semiconductor structure includes a power transistor monolithically integrated with a RC snubber in a die. The power transistor includes body regions extending in a silicon region, gate electrodes insulated from the body region by a gate dielectric, source regions extending in the body regions, the source and the body regions being of opposite conductivity type, and a source interconnect contacting the source regions. The RC snubber comprises including snubber electrodes insulated from the silicon region by a snubber dielectric such that the snubber electrodes and the silicon region form a snubber capacitor having a predetermined value. The snubber electrodes are connected to the source interconnect in a manner so as to form a snubber resistor of a predetermined value between the snubber capacitor and the source interconnect. The snubber capacitor and the snubber resistor are configured to substantially dampen output ringing when the power transistor switches states.

Claims21

Dependent claims

A semiconductor structure comprising:

a power transistor monolithically integrated with a RC snubber in a die, wherein:
(a) the power transistor comprises:
body regions extending in a silicon region;
gate electrodes insulated from the body region by a gate dielectric;
source regions extending in the body regions, the source and the body regions being of opposite conductivity type;
a source interconnect contacting the source regions;
(b) the RC snubber comprises:
snubber electrodes insulated from the silicon region by a snubber dielectric such that the snubber electrodes and the silicon region form a snubber capacitor having a predetermined value, the snubber electrodes being connected to the source interconnect in a manner so as to form a snubber resistor of a predetermined value between the snubber capacitor and the source interconnect,
wherein the snubber capacitor and the snubber resistor are configured to substantially dampen output ringing when the power transistor switches states.

6 more elements

A multi-chip module comprising:

a high-side switch including a high-side power transistor and a high-side RC snubber monolithically integrated in a first die, wherein the high-side power transistor includes a high-side drain interconnect, a high-side source interconnect, and a high-side gate interconnect, and the high-side RC snubber includes a high-side snubber capacitor and a high-side snubber resistor serially coupled between the high-side drain interconnect and the high-side source interconnect so as to substantially dampen output ringing when the high-side switch changes states;
and
a low-side switch including a low-side power transistor and a low-side RC snubber monolithically integrated in a second die, the high-side and low-side switches being serially coupled, wherein the low-side power transistor includes a low-side drain interconnect, a low-side source interconnect, and a low-side gate interconnect, and the low-side RC snubber includes a low-side snubber capacitor and a low-side snubber resistor serially coupled between the low-side drain interconnect and the low-side source interconnect so as to substantially dampen output ringing when the low side power transistor switches states.

Dependencies are inferred from the claim text.

Power Device with Monolithically Integrated RC Snubber

Life of this patent

Power Device with Monolithically Integrated RC Snubber

Life of this patent

Abstract

Claims21