US 2010/0163947 A1 · METHOD FOR FABRICATING PIP CAPACITOR

Abstract

A PIP capacitor and methods thereof. A method of fabricating a PIP capacitor may include forming a field oxide film over a silicon substrate to define a device isolating region and/or an active region. A method of fabricating a PIP capacitor may include forming a lower polysilicon electrode having doped impurities on and/or over an field oxide film. A method of fabricating a PIP capacitor may include performing an oxidizing step to form a first oxide film over a polysilicon and/or a second oxide film on and/or over an active region. A method of fabricating a PIP capacitor may include forming an upper polysilicon electrode on and/or over a region of a first oxide film and forming a gate electrode on and/or over a second oxide film at substantially the same time. A method of fabricating a PIP capacitor may include forming a polysilicon resistor. A PIP capacitor is disclosed.

Claims20

Dependent claims

A method comprising:

forming a field oxide film over a semiconductor substrate defining a device isolating region and an active region;
forming a lower polysilicon electrode including doped impurities over said field oxide film;
performing an oxidizing step to form a first oxide film over said lower polysilicon electrode and a second oxide film over said active region;
and
forming an upper polysilicon electrode over a region of said first oxide film and forming a gate electrode over a portion of said second oxide film at substantially the same time.

2 more elements

Dependencies are inferred from the claim text.

Method for fabricating pip capacitor

Life of this patent

Method for fabricating pip capacitor

Life of this patent

Abstract

Claims20