Image sensor and method for manufacturing the same
OwnerHoon JANGinventor
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Abstract
Provided are an image sensor and a method for manufacturing the same. The image sensor comprises a photodiode, a floating diffusion region, a reset transistor, and a drive transistor. The photodiode generates photocharges. The floating diffusion region accumulates the photocharges. The reset transistor has a source connected to the floating diffusion region, and has a gate and a drain connected to each other to perform a reset function. The drive transistor receives the photocharges and serves as a source follower buffer amplifier.
Claims18
An image sensor comprising:
- a photodiode generating photocharges;
- a floating diffusion region accumulating the photocharges;
- a reset transistor having a source connected to the floating diffusion region, and having a gate and a drain connected to each other to perform a reset function;
- and
- a drive transistor receiving the photocharges and serving as a source follower buffer amplifier.
A method for manufacturing an image sensor having unit pixels, the method comprising:
- forming a gate electrode of a reset transistor on a semiconductor substrate;
- forming a source region and a drain region at sides of the gate electrode;
- forming a first insulating layer covering the gate electrode on the semiconductor substrate;
- forming a contact hole in the first insulating layer, the contact hole exposing both a portion of the gate electrode and a portion of the drain region;
- forming a contact electrode in the contact hole, the contact electrode electrically connecting the gate electrode and the drain region;
- and
- forming a metal interconnection connected to the contact electrode.
An image sensor comprising:
- first and second photodiodes disposed in a row on a semiconductor substrate;
- a floating diffusion region between the first and second photodiodes;
- a first transfer transistor between the first photodiode and the floating diffusion region;
- a second transfer transistor between the second photodiode and the floating diffusion region;
- a reset transistor connected to the floating diffusion region and having a gate electrode and a drain region connected to each other;
- and
- a drive transistor disposed in alignment with the reset transistor and connected to the floating diffusion region through a metal interconnection.
A method for manufacturing an image sensor, comprising:
- preparing a semiconductor substrate implanted with second conductive type impurities;
- forming a first device isolation layer at a portion of a first active region of the semiconductor substrate, and a second isolation layer having therein an isolated active region in a second active region;
- forming a reset transistor and first and second transfer transistors in the first active region, and forming a drive transistor in the second active region;
- and
- forming a first photodiode at one side of the first transfer transistor and a second photodiode at one side of the second transfer transistor by selectively implanting first conductive type impurities into the semiconductor substrate, the second photodiode being isolated from the first photodiode.
Dependencies are inferred from the claim text.