Transistor device comprising an embedded semiconductor alloy having an asymmetric configuration
AssigneeGlobalfoundries Inc.
InventorsStephan Kronholz, Vassilios Papageorgiou, Gunda Beernink, Jan Hoentschel
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Abstract
In sophisticated semiconductor devices, an asymmetric transistor configuration may be obtained on the basis of a strain-inducing semiconductor alloy. To this end, strain relaxation implantation processes may be performed at the drain side according to some illustrative embodiments, while, in other cases, the deposition of the strain-inducing alloy may be performed in an asymmetric manner with respect to the drain side and the source side of the transistor.
Claims25
A method, comprising:
- forming a semiconductor alloy in cavities formed in a crystalline semiconductor region, said cavities being laterally offset from a channel region of a transistor, said semiconductor alloy inducing strain in said channel region;
- and
- selectively introducing a non-doping species into said semiconductor alloy positioned at a drain side of said transistor to reduce an internal strain level of said semiconductor alloy positioned at said drain side.
A method of forming an asymmetric transistor, the method comprising:
- forming a source side cavity in a semiconductor region, said source side cavity being positioned laterally offset from a channel region located below a gate electrode structure of said transistor;
- and
- forming a strain-inducing semiconductor alloy in said source side cavity, said strain-inducing semiconductor alloy representing an asymmetric transistor configuration of a source side relative to a drain side of said transistor.
An asymmetric transistor, comprising:
- a gate electrode structure formed above a channel region;
- a source region formed at a source side of a semiconductor region of said transistor;
- a strain-inducing semiconductor alloy formed at said source side;
- and
- a drain region formed at a drain side of said semiconductor region, said drain side differing from said source side in an amount of strain induced in said channel region and in at least one of a material composition, a dopant profile and a dopant concentration.
Dependencies are inferred from the claim text.