Method for forming silicide in semiconductor device

Abstract

A method of forming a silicide in a semiconductor device includes: forming a poly gate on and/or over the upper portion of a silicon substrate having an active area and an STI formed therein; forming a spacer wall on and/or over both sidewalls of the poly gate; forming source/drain by performing high-concentration ion implantation; forming a silicide blocking pattern on and/or over both sidewalls of the spacer wall and on the STI; forming a multilayer silicide material on and/or over substantially the entire surface of the silicon substrate having the silicide blocking pattern formed thereover; and performing an RTA process on the multilayer silicide material to form a silicide by reaction between the poly gate and the source/drain electrode.

Dependencies are inferred from the claim text.