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US 2010/0163937 A1Published application
Methods of forming nickel sulfide film on a semiconductor device
AssigneeIntel Corporation
InventorsScott Bruce Clendenning, Niloy Mukherjee, Ravi Pillarisetty
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Abstract
Embodiments of the present invention describe a method of forming nickel sulfide layer on a semiconductor device. A nickel sulfide layer is formed on a substrate by alternatingly exposing the substrate to a nickel-containing precursor and a sulfur-containing precursor.
Claims29
A method of forming a semiconductor device comprising:
- providing a substrate;
- exposing a desired region of the substrate to a nickel-containing;
- and
- exposing the desired region of the substrate to a sulfur-containing precursor to form a nickel sulfide film on the desired region.
1 more element
A method of forming a semiconductor device comprising:
- providing a substrate;
- forming a semiconductor body on the substrate the semiconductor body having a top surface and sidewalls extending from the top surface of semiconductor body to the substrate;
- alternatingly exposing the semiconductor body to a nickel-containing precursor and a sulfur-containing precursor to conformally deposit a nickel sulfide film on the top surface and sidewalls of the semiconductor body.
A semiconductor device, comprising:
- a substrate having a gate electrode formed thereon;
- a source region and a drain region formed on the substrate, wherein the source and drain regions are formed on opposite sides of the gate electrode;
- a first nickel sulfide layer formed on the source region;
- and
- a second nickel sulfide layer formed on the drain region.
2 more elements
Dependencies are inferred from the claim text.