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US 2010/0163932 A1Published application
Image sensor and method for manufacturing thereof
OwnerSung-Ho Juninventor
Life of this patent
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Abstract
An image sensor may include a readout circuit formed over a first substrate made of InSb, the first substrate including a pixel part and a periphery part. A wiring and interlayer dielectric layer may be formed over the first substrate including the readout circuit. A photodiode may be formed over the interlayer dielectric layer and over the pixel part of the first substrate, and an upper electrode layer may be connected with the photodiode.
Claims20
An apparatus comprising:
- a readout circuit formed over a first substrate made of InSb, the first substrate including a pixel part and a periphery part;
- a wiring and interlayer dielectric layer that are formed over the first substrate including the readout circuit;
- a photodiode formed over the interlayer dielectric layer and over the pixel part of the first substrate;
- and
- an upper electrode layer connected with the photodiode.
2 more elements
A method comprising:
- forming a readout circuit and an interlayer dielectric layer including a wiring electrically connected with the readout circuit over a first substrate made of InSb, the first substrate including a pixel part and a periphery part;
- forming a second substrate including a photodiode;
- bonding the second substrate including the photodiode onto the interlayer dielectric layer;
- removing the second substrate such that the photodiode remains over the interlayer dielectric layer;
- forming an upper electrode layer connected with the photodiode and the wiring formed at the periphery region;
- and
- forming a passivation layer over the upper electrode layer.
4 more elements
Dependencies are inferred from the claim text.