US 2010/0163930 A1 · SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Abstract

An object of the present invention is to reduce on-state resistance and increases reliability in a semiconductor device having an electrode formed in a recessed structure. As illustrated in FIG. 1B, a first insulating layer 103 is formed. Then, as illustrated in FIG. 1C, a photolithography process is carried out to form a photoresist pattern 104. Subsequently, as illustrated in FIG. 1D, dry etching is applied to the first insulating layer 103. Then, as illustrated in FIG. 1E, a laminated semiconductor structure is etched. Next, in this state, wet etching is applied to the first insulating layer 103 as illustrated in FIG. 1F. Next, in this state, an electrode material 105 is formed on the entire exposed surface as illustrated in FIG. 1G. Finally, as illustrated in 1H, the photoresist pattern 104 is removed.

Claims17

Dependent claims

A semiconductor device manufacturing method forming an electrode in a recessed structure formed in a semiconductor layer, comprising:

a first insulating layer formation process, forming a first insulating layer on the surface of the semiconductor layer;
a lithography process, forming a photoresist pattern having an opening on the first insulating layer;
a semiconductor etching process, etching the semiconductor layer using the photoresist pattern and first insulating layer as a mask to form the recessed structure in the opening;
an electrode film formation process, forming a film of an electrode material;
and
a lift-off process, removing the photoresist pattern to pattern the electrode material so as to form the electrode, wherein
an insulating layer side etching process, making an wider opening of the first insulating layer than the opening of the photoresist where the opening of the photoresist is formed, is performed between the lithography process and the electrode film formation process.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device and its manufacturing method

Life of this patent

Semiconductor device and its manufacturing method

Life of this patent

Abstract

Claims17