Compound semiconductor device and manufacturing method of the same
AssigneeFujitsu Limited
InventorsTadahiro Imada, Atsushi Yamada
Life of this patent
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Abstract
An i-GaN layer (electron transit layer), an n-GaN layer (compound semiconductor layer) formed over the i-GaN layer (electron transit layer), and a source electrode, a drain electrode and a gate electrode formed over the n-GaN layer (compound semiconductor layer) are provided. A recess portion is formed inside an area between the source electrode and the drain electrode of the n-GaN layer (compound semiconductor layer) and at a portion separating from the gate electrode.
Claims20
A compound semiconductor device, comprising:
- an electron transit layer;
- a compound semiconductor layer formed over the electron transit layer;
- and
- a source electrode, a drain electrode and a gate electrode formed over the compound semiconductor layer,
- wherein a recess portion is formed inside an area between the source electrode and the drain electrode of the compound semiconductor layer and at a portion separating from the gate electrode.
A compound semiconductor device, comprising:
- an electron transit layer;
- a compound semiconductor layer formed over the electron transit layer;
- a gate electrode and a source electrode formed over the compound semiconductor layer;
- and
- a drain electrode formed below the electron transit layer,
- wherein a recess portion is formed inside an area between the source electrode and the gate electrode of the compound semiconductor layer.
A manufacturing method of a compound semiconductor device, comprising:
- forming a compound semiconductor layer over an electron transit layer;
- forming a source electrode, a drain electrode and a gate electrode over the compound semiconductor layer;
- and
- forming a recess portion inside an area between the source electrode and the drain electrode of the compound semiconductor layer, and at a portion separating from the gate electrode.
A manufacturing method of a compound semiconductor device, comprising:
- forming a compound semiconductor layer over an electron transit layer;
- forming a gate electrode and a source electrode over the compound semiconductor layer;
- forming a drain electrode below the electron transit layer;
- and
- forming a recess portion inside an area between the source electrode and the gate electrode of the compound semiconductor layer.
Dependencies are inferred from the claim text.