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US 2010/0163927 A1Published application
Apparatus and methods for forming a modulation doped non-planar transistor
AssigneeIntel Corporation
InventorsRavi Pillarisetty, Mantu Hudait, Marko Radosavljevic, Willy Rachmady, Gilbert Dewey, Jack Kavalieros
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Abstract
Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed.
Claims20
A modulation doped non-planar transistor, comprising:
- a substrate;
- a delta doped large bandgap stack on the substrate;
- a multi-gate body comprising a narrow bandgap material on the delta doped large bandgap stack;
- and
- isolation regions adjacent to the delta doped large bandgap stack.
2 more elements
A non-planar transistor, comprising:
- a modulation doped heterostructure, the modulation doped heterostructure comprising an active portion having a first bandgap and a delta doped portion having a second bandgap;
- and
- a dielectric layer adjacent to the delta doped portion of the modulation doped heterostructure.
A method comprising:
- forming a bottom barrier layer;
- depositing a delta doping layer on the bottom barrier layer;
- forming a spacer layer on the delta doping layer;
- selectively forming a quantum well layer on the spacer layer;
- and
- patterning the bottom barrier layer, the delta doping layer, the spacer layer, and the quantum well layer to form a delta doped heterostructure.
3 more elements
Dependencies are inferred from the claim text.