Insulated gate semiconductor device
AssigneesSanyo Electric Co., Ltd., Sanyo Semiconductor Co., Ltd.
InventorsShuji Yoneda, Hiroyasu Ishida, Makoto Oikawa
Life of this patent
Estimating the term…
Abstract
By integrating a diode and a resistor connected in parallel into the same chip as an IGBT and connecting a cathode of the diode to a gate of the IGBT, the value of dv/dt can be limited to a predetermined range inside the chip of the IGBT without a deterioration in turn-on characteristics. Since the chip includes a resistor having such a resistance that a dv/dt breakdown of the IGBT can be prevented, the IGBT can be prevented from being broken by an increase in dv/dt at a site (user site) to which the chip is supplied.
Claims5
An insulated gate semiconductor device comprising:
- a first semiconductor layer of a first general conductivity type;
- a second semiconductor layer of a second general conductivity type and provided on the first semiconductor layer;
- an active area provided in a surface of the second semiconductor layer, the active area being an area where transistor cells of an insulated gate semiconductor element are disposed;
- a diode provided outside the active area on the surface of the second semiconductor layer, the diode having a cathode connected to a gate electrode of the insulated gate semiconductor element and an anode connected to a terminal for connection to a gate drive circuit;
- and
- a resistor provided outside the active area on the surface of the second semiconductor layer, the resistor being connected to both ends of the diode in parallel with the diode.
Dependencies are inferred from the claim text.