Light emitting device having vertical structrue and method for manufacturing the same

A light emitting device having a vertical structure, comprising:

• a conductive support structure comprising a support layer;
• a bonding layer on the conductive support structure;
• a first electrode on the bonding layer, the first electrode comprising an ohmic electrode and a reflective electrode;
• a metal layer arranged between the first electrode and the bonding layer, wherein the ductility of the metal layer is higher than the ductility of the support layer;
• a semiconductor structure having multi-layers on the first electrode, the semiconductor structure having an inclined side surface;
• and
• a second electrode on the semiconductor structure.

A light emitting device having a vertical structure, comprising:

• a conductive support structure comprising a support layer;
• a metal layer on the conductive support structure, wherein the ductility of the metal layer is higher than the ductility of the support layer;
• a bonding layer on the metal layer;
• a first electrode on the bonding layer, the first electrode comprising an ohmic electrode and a reflective electrode;
• a semiconductor structure having multi-layers arranged directly on the ohmic electrode, the semiconductor structure having an inclined side surface, wherein the surface area of the first electrode facing the semiconductor structure is smaller than the surface area of the conductive support structure facing the bonding layer;
• a passivation layer on the semiconductor structure;
• and
• a second electrode on the semiconductor structure.